20pcs IRF3205 IRF3205PBF N-Channel MOSFET Transistor 55V 110A TO-220 Package

Product Description: The power MOSFET IRF3205 is manufactured using advanced process technology and has a very low on-resistance IRF3205 is a high-current N-channel MOSFET capable of switching currents up to 110A and voltages up to 55V The specialty of MOSFETs is that they have a very low on-resistance of only 8.0mΩ, making them suitable for switching circuits such as inverters, motor speed control, DC-DC converters, etc It is important to note that IRF3205 has a high threshold voltage and is therefore not suitable for on/off control of embedded controllers Available in a TO-220AB package Port Description: 1. Gate G controls the bias of the MOS transistor 2. The drain D current flows through the drain 3. The source S current flows out through the source IRF3205 FET parameters: The drain-source breakdown voltage (V BR (DSS)) is 55V The gate-to-source voltage (Vgs) is +/- 20V The threshold voltage (Vg (th)) of the gate is 2 to 4 V The drain current (Id) is 110A The pulsed drain current (IMD) is 390A The power consumption is (PD) of 200W Drain-to-source on-resistance ( R DS (ON) ) 8mΩ The leakage current (ISSS) of the door body is 100nA The total gate charge (Qg) is 146nC The reverse recovery time (TRR) is 69 to 104ns Peak diode recovery (dv/dt) is 5V/ns The rise time (TR) is 101ns The crust thermal resistance (R th jc) is 75°C/W The junction temperature (Tj) is between -55 and 175°C